Nanotwinning-assisted structurally stable copper for fine-pitch ...
Nov 1, 2023 · The redistribution layer (RDL) is crucial for fanning out circuits and for 2.5D/3D IC packaging. As device density increases, RDL CD/pitch must shrink. During RDL circuit fabrication, the etching process is necessary to remove the exposed sputtered Cu …
Next generation copper pattern plating for IC package application
This paper describes the study of a new pattern plate, direct current (DC) electrolytic copper plating chemistry for IC package (PKG) application. The new chemistry shows good via-filling performance and good pattern plate uniformity together with thinner surface copper deposit.
Therefore, innovative copper electroplating solutions that can provide via filling and fine line plating resolution capabilities and a copper deposit that can be etched uniformly across the surface during the flash etching step are desirable.
The investigation of some properties of copper alloys for lead …
Due to their good electrical conductivity and cost, copper alloys for lead frames are widely used in IC packages. In this paper, some properties of copper alloys for lead frames, such as etching properties, etc, are researched.
Utilising the build-up technology, fully filled vias, and embedded copper traces, MIS is capable of producing fine line and high density circuitry. The overall package thickness is also reduced further with these features.
ICEPT 2011 - JIACO - MIP Plasma Decapsulation of copper and …
Decapsulation of plastic integrated circuit (IC) packages with copper wire bonding is achieved by using an atmospheric pressure microwave induced plasma. A thermal model is built to estimate the bulk IC package temperature under different plasma etching conditions.
High pin-count 18 um palladium coated copper wire bonded BGA package with delamination defects are decapsulated without process-induced damage by MIP afterglow etching and the results are...
Microwave induced plasma decapsulation of stressed and
Abstract: The applicability of Microwave Induced Plasma (MIP) afterglow etching in copper wire bonded IC package decapsulation is investigated. In-situ monitoring of the processing temperature during plasma etching is conducted with SOT23 components with diode devices inside as temperature sensor.
proc. ECS 2011 - JIACO - MIP Plasma Decapsulation of copper and …
Plastic integrated circuit packages with copper wire bonds are decapsulated by a Microwave Induced Plasma system. Improvements on microwave coupling of the system are achieved by frequency tuning and antenna modification. Plasmas with a mixture of O2 and CF4 showed a high etching rate around 2 mm3/min.
SOP Lead Frame For Semiconductor Packaging | Be-Cu Etch
We specialize in precision etching high quality lead frames using premium materials such as copper, copper alloys and iron-nickel alloys. Our versatile leadframes are designed to meet the needs of various semiconductor packaging formats, including DIP (Dual In-line Package) and QFP (Quad Flat Package).