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Compoundsemiconductor.net
4d
Guerrilla RF unveils GaN power amplifier dice
Guerrilla RF has released the first in a new class of GaN-on-SiC HEMT power amplifiers being developed by the company.
Compoundsemiconductor.net
4d
Narrow-linewidth DFB lasers extended to 405 and 488nm
This design enables a narrow linewidth (typically 20 MHz at 450 nm) and wavelength precision. Additionally, the lasers ...
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